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NCUEIR > College of Engineering > Department of Mechatronics Engineering > Proceedings > Item 987654321/6429

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/6429

Title:	Surface Morphology and Investigation of A New CMOS Compatible Thermopile with High Fill Factor
Authors:	Chen, Shu Jung Shen, Chih Hsiung
Contributors:	機電系
Keywords:	CMOS Thermopile T-shape Surface Morphology
Date:	2006
Issue Date:	2010-11-29T07:01:36Z
Abstract:	A new CMOS compatible thermopile was designed and fabricated with high fill factor, the floating membrane of the thermopile which we designed was formed by T-shape anisotropic etching window that never be proposed before. The design and fabrication of thermopile sensors are realized by using 1.2 μm CMOS IC technology combined with a subsequent anisotropic frontside etching. Four etching windows with minimum T-shape were opened by the CMOS processes, and then by using N2H4 etching solution the silicon substrate was etched along <100> directions. The T-shape etching windows which proposed in this paper are designed at four quadrant of membrane to form the extended undercut etching area of opened windows of overlap. The floating membrane has a larger area of 1100×1100μm2 and 2 μm thick. Therefore, the area of proposed membrane is increased greatly which absorbs more infrared radiation than the conventional design and enhances responsivity very well. A surface morphology measurement of thermopile is implemented to evaluate the influence of residual stress and characterize geometric shape of membrane practically. More careful analysis of surface morphology show the bending of suspension parts has a deviation of responsivity less than 0.167%. For our work, the T-shape structure of thermopile with large absorption area and high performance by using CMOS compatible process is proven to be very successful and easy fabricated.
Relation:	IMTC 2006 – Instrumentation and Measurement Technology Conference, April 24-27, 2006:2032-2037
Appears in Collections:	[Department of Mechatronics Engineering] Proceedings

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