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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12280

Title: Growth characteristics and properties of ZnO:Ga thin films prepared by pulsed DC magnetron sputtering
Authors: Yen, W. T.;Lin, Yi- Cheng;Yao, P. C.;Ke, J. H.;Chen, Y. L.
Contributors: 機電工程系
Keywords: ZnO:Ga;Optoelectronic properties;Pulse frequency;Pulsed DC magnetron sputter
Date: 2010-03
Issue Date: 2012-07-05T07:11:00Z
Publisher: Elsevier B.V.
Abstract: Transparent conductive ZnO:Ga thin films were deposited on Corning 1737 glass substrate by pulsed direct current (DC) magnetron sputtering. The effects of process parameters, namely pulse frequency and film thickness on the structural and optoelectronic properties of ZnO:Ga thin films are evaluated. It shows that highly c-axis (0 0 2) oriented polycrystalline films with good visible transparency and electrical conductivity were prepared at a pulsed frequency of 10 kHz. Increasing the film thickness also enlarged the grain size and carrier mobility which will subsequently lead to the decrease in resistivity. In summary, ZnO:Ga thin film with the lowest electrical resistivity of 2.01 × 10−4 Ω cm was obtained at a pulse frequency of 10 kHz with 500 nm in thickness. The surface RMS (root mean square) roughness of the film is 2.9 nm with visible transmittance around 86% and optical band gap of 3.83 eV.
Relation: Applied Surface Science, 256(11): 3432-3437
Appears in Collections:[機電工程學系] 期刊論文

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