資料載入中.....
|
請使用永久網址來引用或連結此文件:
http://ir.ncue.edu.tw/ir/handle/987654321/12280
|
| 題名: | Growth characteristics and properties of ZnO:Ga thin films prepared by pulsed DC magnetron sputtering |
| 作者: | Yen, W. T.;Lin, Yi- Cheng;Yao, P. C.;Ke, J. H.;Chen, Y. L. |
| 貢獻者: | 機電工程系 |
| 關鍵詞: | ZnO:Ga;Optoelectronic properties;Pulse frequency;Pulsed DC magnetron sputter |
| 日期: | 2010-03
|
| 上傳時間: | 2012-07-05T07:11:00Z
|
| 出版者: | Elsevier B.V. |
| 摘要: | Transparent conductive ZnO:Ga thin films were deposited on Corning 1737 glass substrate by pulsed direct current (DC) magnetron sputtering. The effects of process parameters, namely pulse frequency and film thickness on the structural and optoelectronic properties of ZnO:Ga thin films are evaluated. It shows that highly c-axis (0 0 2) oriented polycrystalline films with good visible transparency and electrical conductivity were prepared at a pulsed frequency of 10 kHz. Increasing the film thickness also enlarged the grain size and carrier mobility which will subsequently lead to the decrease in resistivity. In summary, ZnO:Ga thin film with the lowest electrical resistivity of 2.01 × 10−4 Ω cm was obtained at a pulse frequency of 10 kHz with 500 nm in thickness. The surface RMS (root mean square) roughness of the film is 2.9 nm with visible transmittance around 86% and optical band gap of 3.83 eV. |
| 關聯: | Applied Surface Science, 256(11): 3432-3437 |
| 顯示於類別: | [機電工程學系] 期刊論文
|
文件中的檔案:
| 檔案 |
大小 | 格式 | 瀏覽次數 |
|---|
| index.html | 0Kb | HTML | 673 | 檢視/開啟 |
|
在NCUEIR中所有的資料項目都受到原著作權保護.
|
