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http://ir.ncue.edu.tw/ir/handle/987654321/12288
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| Title: | Preparation and characterization of Cu(In,Ga)(Se,S)2 films without selenization by co-sputtering from Cu(In,Ga)Se2 quaternary and In2S3 targets |
| Authors: | Lin, Yi- Cheng;Ke, J. H.;Yen, W. T.;Liang, S. C.;Wu, C. H.;Chiang, C. T. |
| Contributors: | 機電工程系 |
| Keywords: | Cu(In,Ga)(Se,S)2;Co-sputter process;One-stage annealing |
| Date: | 2011-02
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| Issue Date: | 2012-07-05T07:11:23Z
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| Publisher: | Elsevier B.V. |
| Abstract: | In this study, Cu(In,Ga)(Se,S)2 (CIGSS) thin films were deposited onto a bi-layer Mo coated soda-lime glass by co-sputtering a chalcopyrite Cu(In,Ga)Se2 (CIGS) quaternary alloy target and an In2S3 binary target. A one-stage annealing process was performed to form CIGSS chalcopyrite phase without post-selenization. Experimental results show that CIGSS films were prepared by the proposed co-sputter process via CIGS (70 W by radio frequency) and In2S3 (30 W by direct current) with a substrate temperature of 373 K, working pressure of 0.67 Pa, and one-stage annealing at 798 K for 30 min. The stoichiometry ratios of the CIGSS film were Cu/(In + Ga) = 0.92, Ga/(In + Ga) = 0.26, and Se/(S) = 0.49 that approached device-quality stoichiometry ratio (Cu/(In + Ga) < 0.95, Ga/(In + Ga) < 0.3, and (Se/S) ≈ 0.5). The resistivity of the sample was 14.8 Ω cm, with a carrier concentration of 3.4 × 1017 cm−3 and mobility of 1.2 cm2 V−1 s−1. The resulting film exhibited p-type conductivity with a double graded band-gap structure. |
| Relation: | Applied Surface Science, 257(5): 4278-4284 |
| Appears in Collections: | [機電工程學系] 期刊論文
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