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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12288

Title: Preparation and characterization of Cu(In,Ga)(Se,S)2 films without selenization by co-sputtering from Cu(In,Ga)Se2 quaternary and In2S3 targets
Authors: Lin, Yi- Cheng;Ke, J. H.;Yen, W. T.;Liang, S. C.;Wu, C. H.;Chiang, C. T.
Contributors: 機電工程系
Keywords: Cu(In,Ga)(Se,S)2;Co-sputter process;One-stage annealing
Date: 2011-02
Issue Date: 2012-07-05T07:11:23Z
Publisher: Elsevier B.V.
Abstract: In this study, Cu(In,Ga)(Se,S)2 (CIGSS) thin films were deposited onto a bi-layer Mo coated soda-lime glass by co-sputtering a chalcopyrite Cu(In,Ga)Se2 (CIGS) quaternary alloy target and an In2S3 binary target. A one-stage annealing process was performed to form CIGSS chalcopyrite phase without post-selenization. Experimental results show that CIGSS films were prepared by the proposed co-sputter process via CIGS (70 W by radio frequency) and In2S3 (30 W by direct current) with a substrate temperature of 373 K, working pressure of 0.67 Pa, and one-stage annealing at 798 K for 30 min. The stoichiometry ratios of the CIGSS film were Cu/(In + Ga) = 0.92, Ga/(In + Ga) = 0.26, and Se/(S) = 0.49 that approached device-quality stoichiometry ratio (Cu/(In + Ga) < 0.95, Ga/(In + Ga) < 0.3, and (Se/S) ≈ 0.5). The resistivity of the sample was 14.8 Ω cm, with a carrier concentration of 3.4 × 1017 cm−3 and mobility of 1.2 cm2 V−1 s−1. The resulting film exhibited p-type conductivity with a double graded band-gap structure.
Relation: Applied Surface Science, 257(5): 4278-4284
Appears in Collections:[機電工程學系] 期刊論文

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