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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12428

Title: Band-Gap Bowing Parameter of the InxGa1-xN Derived From Theoretical Simulation
Authors: Kuo, Yen-Kuang;Lin, Wen-Wei;Lin, Jiann
Contributors: 物理學系
Keywords: InGaN;Band-gap energy;Band-gap bowing parameter;Numerical study
Date: 2001-05
Issue Date: 2012-07-19T01:46:19Z
Publisher: The Japan Society of Applied Physics
Abstract: The band-gap energy and band-gap bowing parameter of the wurtzite InGaN alloys are investigated numerically with the CASTEP simulation program. The simulation results suggest that the unstrained band-gap bowing parameter for the wurtzite InGaN alloys is b=1.21±0.03 eV. The simulation results also show that the width of the InxGa1-xN top valence band at the Γ point decreases when the indium composition increases and has a value of 7.331 eV for the GaN (x=0) and 6.972 eV for the In0.375Ga0.625N (x=0.375).
Relation: Japanese Journal of Applied Physics, 40(5A): 3157-3158
Appears in Collections:[物理學系] 期刊論文

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