The band-gap energy and band-gap bowing parameter of the wurtzite InGaN alloys are investigated numerically with the CASTEP simulation program. The simulation results suggest that the unstrained band-gap bowing parameter for the wurtzite InGaN alloys is b=1.21±0.03 eV. The simulation results also show that the width of the InxGa1-xN top valence band at the Γ point decreases when the indium composition increases and has a value of 7.331 eV for the GaN (x=0) and 6.972 eV for the In0.375Ga0.625N (x=0.375).
關聯:
Japanese Journal of Applied Physics, 40(5A): 3157-3158
