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Numerical Analysis on Optical Properties of Yellowish Green AlGaInP Vertical-Cavity Surface-Emitting Lasers
AlGaInP;Vertical-Cavity Surface-Emitting Laser;Numerical Simulation
|Issue Date: ||2012-07-19T01:46:32Z
The AlGaIaP vertical-cavity surface-emitting lasers (VCSEL) have received much attention in the past few Years. Several research institutes have designed and manufactured red VCSEL with emitting wavelengths near 650 nm. Quite recently, researchers and commercial companies have paid special attention to the VCSEL of even Shorter wavelengths in the yellow and yellowish green spectral range. The emission efficiency of the AlGaInP Semiconductor materials becomes poor when the emitting wavelength is shorter than 555 nm due to its indirect band gap characteristics. However, the AlGaInP still has good emission efficiency when its emitting wavelength is near 570 nm. This is one of the major reasons why the 570nm AlGaInP light emitting diodes (LED) still play an important role in the LED market. Therefore, the growth of a 570nm yellowish green AlGaInP VCSEL is feasible. In this paper, we firstly explain the importance of developing the 570nm yellowish green AlGaInP VCSEL. We then justify the feasibility of growing a 570nm yellowish green AlGaInP VCSEL and investigate the optical properties of this VCSEL with a PICS3D simulation program. Finally, we intend to design an optimized structure that could possibly be used as a reference for those researchers who wish to grow this specific VCSEL.
|Relation: ||光學工程, 79: 87-100|
|Appears in Collections:||[物理學系] 期刊論文|
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