National Changhua University of Education Institutional Repository : Item 987654321/12475
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题名: Optical Characteristics of Yellowish Green InGaAlP Quantum Well Structure with an N-type Well
作者: Chang, Yuni;Huang, Hsu-Ching;Kuo, Yen-Kuang
贡献者: 物理學系
关键词: InGaAlP;n-type well;Yellow-green LED;Numer ical simulation
日期: 2000
上传时间: 2012-07-19T01:47:26Z
摘要: Optical character istics of the yellowish green
InGaAlP semiconductor laser with an n-type well is numer ically
studied with a commercial LASTIP simulation program. The
result shows that an appropr iate n-type well can reduce the laser
threshold current without an increase of the electr ic resistance
and a change of the laser wavelength. The improvement in
threshold current with an n-type well is in the range of 24% to
34% for a temperature r ange from 100 to 400 K when compared
to the conventional laser diode.
關聯: in the 2nd International Photonics Conference (IPC2000, National Chiao Tung University, Hsinchu, Taiwan), paper TH-S1-P003, Proc. IPC 2000: 494-496
显示于类别:[物理學系] 會議論文

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