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|Title: ||Numerical Study on Strained InGaAsP/InGaP Quantum Wells for 850-nm Vertical-cavity Surface-emitting Lasers|
|Authors: ||Kuo, Yen-Kuang;Chen, Jun-Rong;Chen, Mei-Ling;Liou, Bo-Ting|
|Issue Date: ||2012-07-19T01:48:03Z
|Abstract: ||The physical and optical properties of compressively|
strained InGaAsP/InGaP quantum wells for 850-nm
vertical-cavity surface-emitting lasers are numerically studied.
The simulation results show that the maximum optical gain,
transparency carrier densities, transparency radiative current
densities, and differential gain of InGaAsP quantum wells can
be efficiently improved by employing a compressive strain of
approximately 1.24%in the InGaAsP quantum wells. The simulation
results suggest that the 850-nm InGaAsP/InGaP verticalcavity
surface-emitting lasers have the best laser performance
when the number of quantum wells is one, which is mainly
attributed to the non-uniform hole distribution in multiple quantum
wells due to high valence band offset.
|Relation: ||Applied Physics B: Lasers and Optics, 86(4): 623-631|
|Appears in Collections:||[物理學系] 期刊論文|
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