English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6491/11663
Visitors : 23808913      Online Users : 93
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
Login ‧ Upload ‧ Help ‧ About ‧ Administer

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12512

Title: Investigation of Violet InGaN Laser Diodes with Normal and Reversed Polarizations
Authors: Yen, Sheng-Horng;Kuo, Yen-Kuang;Tsai, Meng-Lun;Hsu, Ta-Cheng
Contributors: 物理學系
Date: 2007-11
Issue Date: 2012-07-19T01:48:09Z
Publisher: American Institute of Physics
Abstract: The polarity is a special property for III-nitride materials with wurtzite structure along different orientations. The influence of normal and reversed polarizations on laser performance of the violet laser diodes with Ga-face and N-face configurations is studied numerically. Specifically, the laser performance, band diagram, carrier confinement, and emission wavelength are investigated. The results show that the threshold current is improved and emission wavelength is redshifted when the laser diode is with reversed polarization.
Relation: Applied Physics Letters, 91(20): 201118-1 – 201118-3
Appears in Collections:[物理學系] 期刊論文

Files in This Item:

File SizeFormat
index.html0KbHTML410View/Open


All items in NCUEIR are protected by copyright, with all rights reserved.

 

DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback