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請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/12512

題名: Investigation of Violet InGaN Laser Diodes with Normal and Reversed Polarizations
作者: Yen, Sheng-Horng;Kuo, Yen-Kuang;Tsai, Meng-Lun;Hsu, Ta-Cheng
貢獻者: 物理學系
日期: 2007-11
上傳時間: 2012-07-19T01:48:09Z
出版者: American Institute of Physics
摘要: The polarity is a special property for III-nitride materials with wurtzite structure along different orientations. The influence of normal and reversed polarizations on laser performance of the violet laser diodes with Ga-face and N-face configurations is studied numerically. Specifically, the laser performance, band diagram, carrier confinement, and emission wavelength are investigated. The results show that the threshold current is improved and emission wavelength is redshifted when the laser diode is with reversed polarization.
關聯: Applied Physics Letters, 91(20): 201118-1 – 201118-3
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