English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6480/11652
Visitors : 20273395      Online Users : 303
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12529

Title: Effect of N-Type AlGaN Layer on Carrier Transportation and Efficiency Droop of Blue InGaN Light-Emitting Diodes
Authors: Yen, Sheng-Horng;Tsai, Miao-Chan;Tsai, Meng-Lun;Shen, Yu-Jiun;Hsu, Ta-Cheng;Kuo, Yen-Kuang
Contributors: 物理學系
Date: 2009-07
Issue Date: 2012-07-19T01:48:33Z
Publisher: IEEE
Abstract: The effect of an n-type AlGaN layer on the physical properties of blue InGaN light-emitting diodes (LEDs) is investigated numerically. The p-type AlGaN electron-blocking layer is usually used in blue LEDs to reduce the electron leakage current. However, the p-type AlGaN layer also retards the injection of holes, which leads to the degradation of efficiency at high current. To improve the efficiency droop of blue InGaN LEDs at high current, an n-type AlGaN layer below the active region is proposed to replace the traditional p-type AlGaN layer. The simulation results show that the improvement in efficiency droop is due mainly to the sufficiently reduced electron leakage current and more uniform distribution of holes in the quantum wells.
Relation: IEEE Photonics Technology Letters, 21(14): 975-977
Appears in Collections:[物理學系] 期刊論文

Files in This Item:

File SizeFormat
index.html0KbHTML418View/Open


All items in NCUEIR are protected by copyright, with all rights reserved.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback