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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12539

Title: Characteristics of 850-nm InGaAs/AlGaAs Vertical-cavity Surface-emitting Lasers
Authors: Chang, Yuni;Kuo, Yen-Kuang;Huang, Man-Fang
Contributors: 物理學系
Keywords: Semiconductor laser;VCSEL;III-V semiconductor;Optical property;Numerical simulation
Date: 2002-10
Issue Date: 2012-07-19T01:48:54Z
Publisher: SPIE--The International Society for Optical Engineering
Abstract: The vertical-cavity surface-emitting lasers (VCSEL) operating in the spectral range near 850 nm usually utilize GaAs/AlGaAs as the active layer materials. In this work, in addition to the traditional unstrained GaAs/AlGaAs semiconductor laser, the characteristics of the strained InGaAs/AlGaAs vertical-cavity surface-emitting laser and the distributed Bragg reflectors (DBR) used in this semiconductor laser are investigated with a PICS3D (abbreviation of Photonic Integrated Circuit Simulator in 3D) simulation program. The simulation results show that the strained InGaAs/AlGaAs VCSEL has a better optical performance than that of the traditional unstrained GaAs/AlGaAs VCSEL. That is, when compared with the unstrained GaAs/AlGaAs quantum well structures, the strained InGaAs/AlGaAs VCSEL has a higher stimulated recombination rate, a lower threshold current, a higher main-side mode suppression ratio, and a higher characteristic temperature, which might be owing to its narrower well width and smaller carrier effective masses.
Relation: Proceedings of SPIE, 4913: 31-40 (Semiconductor Lasers and Applications)
Appears in Collections:[物理學系] 會議論文

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