Loading...
|
Please use this identifier to cite or link to this item:
http://ir.ncue.edu.tw/ir/handle/987654321/12610
|
| Title: | Numerical Study for 1.55-μm AlGaInAs/InP Semiconductor Lasers |
| Authors: | Liou, Bo-Ting;Yen, Sheng-Horng;Yao, Ming-Wei;Chen, Mei-Ling;Kuo, Yen-Kuang;Chang, Shu-Hsuan |
| Contributors: | 物理學系 |
| Date: | 2006-10
|
| Issue Date: | 2012-07-19T01:50:28Z
|
| Publisher: | SPIE--The International Society for Optical Engineering |
| Abstract: | Referred to the laser structure and its experimental results obtained by Selmic et al. and Liu et al., optimized active structure for the 1.55-μm quantum well lasers based on AlGaInAs material system is investigated. A structure with 1.2% compressive-strained wells and a p-type AlInAs electron stopper layer of 20 nm thickness and 5×1023 m-3 doping concentration is suggested. Using this structure the threshold current is reduced to 17.8 mA, and the electron overflow percentage is decreased to 1.74% at 330 K. Furthermore, the characteristic temperatures of threshold currents are enhanced to 55.6 K, 67.0 K, and 43.3 K in operating temperature ranges of 300 K~350 K, 300 K~330 K, and 330 K~350 K, respectively. |
| Relation: | Proceedings of SPIE, 6368: 636814 (Optoelectronic Devices: Physics, Fabrication, and Application III) |
| Appears in Collections: | [物理學系] 會議論文
|
Files in This Item:
| File |
Size | Format | |
|---|
| index.html | 0Kb | HTML | 503 | View/Open |
|
All items in NCUEIR are protected by copyright, with all rights reserved.
|
