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NCUEIR > College of Science > Department of Physics > Proceedings > Item 987654321/12613

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12613

Title:	Experimental and Theoretical Analysis on Ultraviolet 370-nm AlGaInN Light-emitting Diodes
Authors:	Chang, Yi-An;Yen, Sheng-Horng;Ko, Tsung-Hsine;Wang, Te-Chung;Lu, Chun-Yi;Kuo, Hao-Chung;Kuo, Yen-Kuang;Lu, Tien-Chang;Wang, Shing-Chung
Contributors:	物理學系
Date:	2006
Issue Date:	2012-07-19T01:50:31Z
Publisher:	Optical Society of America
Abstract:	A 370-nm LED with an AlGaN electron-block layer is fabricated. Simulation results suggest that optimal performance is obtained when the LED has more than 3 wells and the AlGaN has Al composition of 19–21%.
Relation:	in Conference on Lasers and Electro-Optics (CLEO’06, Long Beach, California) paper JWB 77
Appears in Collections:	[Department of Physics] Proceedings

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