English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6498/11670
Visitors : 26659212      Online Users : 95
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13122

Title: AlGaInP Light-emitting Diodes with Mirror Substrate Fabricated by Wafer Bonding
Authors: Horng, R. H.;Wuu, D. S.;Wei, S. C.;Tseng, C. Y.;Huang, Man-Fang;Chang, K. H.;Liu, P. H.;Lin, K. C.
Contributors: 光電科技研究所
Date: 1999-11
Issue Date: 2012-08-07T06:17:17Z
Publisher: American Institute of Physics
Abstract: An AlGaInP light-emitting diode (LED) with a Au/AuBe/SiO2/Si mirror substrate has been fabricated using wafer bonding. The bonded mirror-substrate LED is capable of emitting luminous intensity of 90 and 205 mcd under 20 and 50 mA injection, respectively. The emission wavelength was found to be independent of the injection current. This feature is attributed to the Si substrate providing a good heat sink. � 1999 American Institute of Physics.
Relation: App. Phys. Lett., 75(20): 3054-3056
Appears in Collections:[光電科技研究所] 期刊論文

Files in This Item:

File SizeFormat

All items in NCUEIR are protected by copyright, with all rights reserved.


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback