National Changhua University of Education Institutional Repository : Item 987654321/13124
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6507/11669
Visitors : 30697296      Online Users : 264
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item:

Title: Wafer-Bonded AlGaInP/Au/AuBe/SiO2/Si Light-Emitting Diodes
Authors: Horng, Ray-Hua;Wuu, Dong-Sing;Wei, Sun-Chin;Tseng, Chung-Yang;Huang, Man-Fang;Chang, Kuo-Hsiung;Liu, Pin-Hui;Lin, Kun-Chuan
Contributors: 光電科技研究所
Keywords: AIGalnP;LED;Mirror substrate;Wafer bonding;Absorbed-substrate;Joule heatin
Date: 2000-04
Issue Date: 2012-08-07T06:17:20Z
Publisher: The Japan Society of Applied Physics
Abstract: An AlGaInP light-emitting diode (LED) with a Au/AuBe/SiO2/Si mirror substrate has been successfully fabricated by the wafer bonding technique. The mirror-substrate LED is capable of emitting luminous intensity of 90 mcd under 20 mA injection. It is clearly far superior to the conventional absorbed-substrate LED with a distributed Bragg reflector structure (≤1 mcd). This device exhibits normal p-n diode behavior with a forward voltage of less than 2 V operating at 20 mA. The leakage current is about 3 nA under a 36 V reverse bias. This result indicates that the wafer bonding technique does not adversely affect the I–V characteristic of the LED device. Moreover, the emission wavelength of the bonded LED was independent of the injection current. The low forward series resistance and the Si substrate providing a good heat sink solve the joule heating problem inherent in conventional LEDs.
Relation: Jpn. J. App. Phys., 39(4B): 2357-2359
Appears in Collections:[Graduate Institute of Photonics Technologies] Periodical Articles

Files in This Item:

File SizeFormat

All items in NCUEIR are protected by copyright, with all rights reserved.


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback