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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13128

Title: Optimization of Active Layer Structures to Minimize Leakage Current for AlGaInP Laser Diode
Authors: Huang, Man-Fang;Tsai, M. L.;Shin, J. Y.;Sun, Y. L.;Yang, R. M.;Kuo, Y. K.
Contributors: 光電科技研究所
Date: 2005
Issue Date: 2012-08-07T06:17:32Z
Publisher: SpringerLink
Abstract: Theoretical analysis for different active layer structures
under the same waveguide confinement is conducted to
minimize the electron overflow from the active layer to the
p-cladding layer for the AlGaInP laser diode. An active layer
with five quantum wells and a (AlxGa1−x)InP barrier with an x
composition of 0.5 has found to be the optimal structure for the
AlGaInP laser diode suitable for DVD-ROM and DVD player.
Experimental results have confirmed that the characteristic temperature
can be as high as 110 K at far field angles of 29◦/9◦ for
this optimized AlGaInP laser diode.
Relation: Applied Physics A: Materials Science & Processing, 81(7): 1369-1373
Appears in Collections:[光電科技研究所] 期刊論文

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