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題名: | Optimization of Active Layer Structures to Minimize Leakage Current for AlGaInP Laser Diode |
作者: | Huang, Man-Fang;Tsai, M. L.;Shin, J. Y.;Sun, Y. L.;Yang, R. M.;Kuo, Y. K. |
貢獻者: | 光電科技研究所 |
日期: | 2005
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上傳時間: | 2012-08-07T06:17:32Z
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出版者: | SpringerLink |
摘要: | Theoretical analysis for different active layer structures under the same waveguide confinement is conducted to minimize the electron overflow from the active layer to the p-cladding layer for the AlGaInP laser diode. An active layer with five quantum wells and a (AlxGa1−x)InP barrier with an x composition of 0.5 has found to be the optimal structure for the AlGaInP laser diode suitable for DVD-ROM and DVD player. Experimental results have confirmed that the characteristic temperature can be as high as 110 K at far field angles of 29◦/9◦ for this optimized AlGaInP laser diode. |
關聯: | Applied Physics A: Materials Science & Processing, 81(7): 1369-1373 |
顯示於類別: | [光電科技研究所] 期刊論文
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