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|Title: ||Optimization of Active Layer Structures to Minimize Leakage Current for AlGaInP Laser Diode|
|Authors: ||Huang, Man-Fang;Tsai, M. L.;Shin, J. Y.;Sun, Y. L.;Yang, R. M.;Kuo, Y. K.|
|Issue Date: ||2012-08-07T06:17:32Z
|Abstract: ||Theoretical analysis for different active layer structures|
under the same waveguide confinement is conducted to
minimize the electron overflow from the active layer to the
p-cladding layer for the AlGaInP laser diode. An active layer
with five quantum wells and a (AlxGa1−x)InP barrier with an x
composition of 0.5 has found to be the optimal structure for the
AlGaInP laser diode suitable for DVD-ROM and DVD player.
Experimental results have confirmed that the characteristic temperature
can be as high as 110 K at far field angles of 29◦/9◦ for
this optimized AlGaInP laser diode.
|Relation: ||Applied Physics A: Materials Science & Processing, 81(7): 1369-1373|
|Appears in Collections:||[光電科技研究所] 期刊論文|
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