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Please use this identifier to cite or link to this item:
http://ir.ncue.edu.tw/ir/handle/987654321/13147
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| Title: | Wafer-bonded InGaAlP/AuBe/glass Light-emitting Diodes |
| Authors: | Horng, R. H.;Wuu, D. S.;Tseng, H. W.;Wei, S. C.;Huang, Man-Fang;Chang, K. H.;Liu, P. H.;Lin, K. C. |
| Contributors: | 光電科技研究所 |
| Date: | 1999
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| Issue Date: | 2012-08-07T06:19:22Z
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| Publisher: | IEEE |
| Abstract: | Summary form only given. High-brightness visible light-emitting diodes (LEDs) are becoming increasingly important and have numerous potential applications, such as in the field of optical display systems. The quaternary In0.5(Ga1-xAlx)0.5 P alloys, which are lattice matched to GaAs, have a direct band-gap that ranges from 1.88 to 2.3 eV. InGaAlP is expected to be a promising candidate in high brightness visible LEDs. One of the problems in the InGaAlP LEDs grown on GaAs substrates was a restriction of light extraction efficiency caused by light absorption in the GaAs substrate. The effect of an absorbing layer or substrate can be minimized by two methods: one is growing a Bragg reflector between the standard LED epitaxial layers and the absorbing GaAs substrate, and the other is wafer bonding technology |
| Relation: | Lasers and Electro-Optics, 1999. CLEO '99, CTuK41: 137-138 |
| Appears in Collections: | [光電科技研究所] 會議論文
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