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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13549

Title: Influence of built-in polarization on electronic blocking layers for InGaN quantum-well lasers
Authors: Lee, Chung-Hsien;Chen, Jun-Rong;Kuo, Yen-Kuang;Chang, Shu-Hsuan;Liou, Bo-Ting
Contributors: 工業教育與技術學系
Keywords: Built-in polarization;Numerical simulation;III-V semiconductor;Semiconductor laser
Date: 2006-12
Issue Date: 2012-08-27T09:35:55Z
Publisher: 國立清華大學光電工程研究所
Abstract: The influence of built-in polarization on electronic blocking layer for InGaN quantum-well lasers is numerically studied by employing an advanced device simulation program. The simulation results indicate that electron overflow of InGaN quantum-well laser can be reduced by using the AlInGaN electronic blocking layer. When the aluminum and indium compositions in AlInGaN electronic blocking layer are appropriately designed, the built-in charge density at the interface between InGaN barrier and AlInGaN electronic blocking layer can be reduced. Consequently, the electron leakage and threshold current can be decreased when the built-in polarization is taken into account in our simulation. Furthermore, higher quantum-well optical confinement factor can be obtained by using the AlInGaN electronic blocking layer.
Relation: 2006年台灣光電科技研討會, 國立清華大學光電工程研究所, 2006年12月15-16: 129
Appears in Collections:[工業教育與技術學系] 會議論文

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