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Please use this identifier to cite or link to this item:
http://ir.ncue.edu.tw/ir/handle/987654321/13549
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| Title: | Influence of built-in polarization on electronic blocking layers for InGaN quantum-well lasers |
| Authors: | Lee, Chung-Hsien;Chen, Jun-Rong;Kuo, Yen-Kuang;Chang, Shu-Hsuan;Liou, Bo-Ting |
| Contributors: | 工業教育與技術學系 |
| Keywords: | Built-in polarization;Numerical simulation;III-V semiconductor;Semiconductor laser |
| Date: | 2006-12
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| Issue Date: | 2012-08-27T09:35:55Z
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| Publisher: | 國立清華大學光電工程研究所 |
| Abstract: | The influence of built-in polarization on electronic blocking layer for InGaN quantum-well lasers is numerically studied by employing an advanced device simulation program. The simulation results indicate that electron overflow of InGaN quantum-well laser can be reduced by using the AlInGaN electronic blocking layer. When the aluminum and indium compositions in AlInGaN electronic blocking layer are appropriately designed, the built-in charge density at the interface between InGaN barrier and AlInGaN electronic blocking layer can be reduced. Consequently, the electron leakage and threshold current can be decreased when the built-in polarization is taken into account in our simulation. Furthermore, higher quantum-well optical confinement factor can be obtained by using the AlInGaN electronic blocking layer. |
| Relation: | 2006年台灣光電科技研討會, 國立清華大學光電工程研究所, 2006年12月15-16: 129 |
| Appears in Collections: | [工業教育與技術學系] 會議論文
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Files in This Item:
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Size | Format | |
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| 2030100716010.pdf | 115Kb | Adobe PDF | 428 | View/Open |
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