National Changhua University of Education Institutional Repository : Item 987654321/13961
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6507/11669
造访人次 : 30293407      在线人数 : 458
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/13961

题名: Behavior of the First Layer Growth in GaAs Molecular Beam Epitaxy
作者: Liu, D. G.;Lee, C. P.;Chang, K. H.;Wu, Jenq-Shinn;Liou, D. C.
贡献者: 電子工程學系
关键词: GALLIUM ARSENIDES;MOLECULAR BEAM EPITAXY;RHEED;FILM GROWTH;MONITORING;RECRYSTALLIZATION
日期: 1990-10
上传时间: 2012-09-10T02:32:46Z
出版者: American Institute of Physics
摘要: The first layer growth in GaAs molecular beam epitaxy has been studied by reflection high‐energy electron diffraction (RHEED). The time between the growth start and the first RHEED intensity peak is found to be dependent on the starting surface condition and is different from the time needed for a single layer growth. Periodic flux interruption has been used to study the surface recovery behavior as a function of growth time. When the growth time is the same as the time for a single layer growth, sustained two‐dimensional growth can be obtained.
關聯: Appl. Phys. Lett., 57(14): 1392-1394
显示于类别:[電子工程學系] 期刊論文

文件中的档案:

档案 大小格式浏览次数
index.html0KbHTML648检视/开启


在NCUEIR中所有的数据项都受到原著作权保护.

 

DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈