National Changhua University of Education Institutional Repository : Item 987654321/13965
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6498/11670
Visitors : 26021322      Online Users : 218
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
NCUEIR > College of Engineering > eedept > Periodical Articles >  Item 987654321/13965

Please use this identifier to cite or link to this item:

Title: Improved AlGaAs/GaAs Double-barrier Resonant Tunneling Structures Using Two-dimensional Source Electrons
Authors: Wu, Jenq-Shinn;Lee, C. P.;Chang, C. Y.;Chang, K. H.;Liu, D. G.;Liou, D. C.
Contributors: 電子工程學系
Date: 1991-01
Issue Date: 2012-09-10T02:33:01Z
Publisher: American institute of Physics
Abstract: We report the enhancement of peak-to-valley current ratios (PVCRs) of double-barrier resonant tunneling structures (DBRTSs) based on the AlGaAs/GaAs material system. The PVCRs as high as 25.4 and 18 have been obtained at 77 K for superlattice and alloy barrier structures with 0.2~pm undoped electrodes, respectively. These are the largest PVCRs to date for AlGaAs/GaAs DBRTSs. The large band bending across the undoped electrodes causes size quantization of the accumulation layer, resulting in better resonant tunneling characteristics.
Relation: J. Appl. Phys., 69(2): 1122-1123
Appears in Collections:[eedept] Periodical Articles

Files in This Item:

File SizeFormat

All items in NCUEIR are protected by copyright, with all rights reserved.


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback