National Changhua University of Education Institutional Repository : Item 987654321/13972
English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 6487/11649
造訪人次 : 29400062      線上人數 : 201
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 進階搜尋

請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/13972

題名: A Novel Technique for Low-Threshold and High-Power InGaAs/GaAs Strained-layer 0.98 μm Buried Heterostructure Laser Fabrication
作者: Liou, D. C.;Chiang, W. H.;Lee, C. P.;Chang, K. H.;Liu, D. G.;Wu, Jenq-Shinn;Tu, Y. K.
貢獻者: 電子工程學系
日期: 1992-02
上傳時間: 2012-09-10T02:33:38Z
出版者: American Institute of Physics
摘要: A novel fabrication technique has been developed for InGaAs/GaAs strained-layer buried
heterostructure lasers. Dielectric masks and Zn diffusion are not required in this
technique. This novel fabrication process is much easier than the conventional approach and
yields excellent laser results. A low threshold of 3 mA and high-power operation for
lasing wavelength of 9800&20 8, have been achieved with graded index separate confinement
heterostructure devices using this novel technique.
關聯: J. Appl. Phys., 71(3): 1525-1527
顯示於類別:[電子工程學系] 期刊論文

文件中的檔案:

檔案 大小格式瀏覽次數
index.html0KbHTML573檢視/開啟


在NCUEIR中所有的資料項目都受到原著作權保護.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回饋