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NCUEIR > College of Engineering > eedept > Proceedings >  Item 987654321/14003

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/14003

Title: Effect of Doping Ratio on Device Characteristics of Double δ-doped In0.52Al0.48As/In0.53Ga0.47As HEMTs
Authors: Wu, Jenq-Shinn;Tsen, J. H.
Contributors: 電子工程學系
Date: 2007
Issue Date: 2012-09-10T02:36:09Z
Relation: International Electron Devices and Material Symposia
Appears in Collections:[eedept] Proceedings

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