National Changhua University of Education Institutional Repository : Item 987654321/15111
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6507/11669
Visitors : 29617134      Online Users : 246
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/15111

Title: Effect of the Polyimide Concentration on the Memory Stability of the Silica-Nanoparticle-Doped Hybrid Aligned Nematic Cell
Authors: Huang, Chi-Yen;Chen, Jian-Hong;Hsieh, Chia-Ting;Song, Heng-Cheng;Wang, Yu-Wu;Horng, Lance;Shih, Yu-Tai;Hwang, Shug-June
Contributors: 光電科技研究所
Date: 2011-02
Issue Date: 2013-01-07T02:11:03Z
Publisher: The Japan Society of Applied Physics
Abstract: We investigate the stability of the memory state of the silica-nanoparticle-doped hybrid aligned nematic (SN-HAN) cell. The memory stability of the cell is attributed to the employed planar substrate, which is coated with a homogeneous polyimide (H-PI) film. A H-PI film with a low H-PI solid concentration gives the cell high memory stability. This is because the low H-PI solid concentration causes the film to have a high polar surface energy, trapping polar silica nanoparticles on the planar substrate tightly. The low H-PI solid concentration also gives the substrate a bumpy surface, which has a large surface area for trapping silica nanoparticles.
Relation: Jpn. J. Appl. Phys., 50(2): 021702
Appears in Collections:[Graduate Institute of Photonics Technologies] Periodical Articles

Files in This Item:

File SizeFormat
index.html0KbHTML664View/Open


All items in NCUEIR are protected by copyright, with all rights reserved.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback