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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/15260

Title: Formation of Self-assembled ZnTe Quantum Dots on ZnSe Buffer Layer Grown on GaAs Substrate by Molecular Beam Epitaxy
Authors: Kuo, M. C.;Yang, C. S.;Tseng, P. Y.;Lee, J.;Shen, J. L.;Chou, W. C.;Shih, Yu-Tai;Ku, C. T.;Lee, M. C.;Chen, W. K.
Contributors: 物理學系
Keywords: A1. Atomic force microscopy;A1. Nanostructures;A3. Molecular beam epitaxy;B2. Semiconducting II-VI materials
Date: 2002-07
Issue Date: 2013-01-07T09:25:31Z
Publisher: Elsevier
Abstract: Self-assembled ZnTe quantum dot structures were grown by molecular beam epitaxy on GaAs substrates with a 200 nm ZnSe buffer layer. Surface morphology was studied by atomic force microscopy. A three-dimensional Volmer–Weber growth mode was identified. Two types of dots were observed. Strong photoluminescence observed at 1.9–2.2 eV was attributed to emission from the large type II ZnTe quantum dots. Emission from the smaller ZnTe quantum dots was observed at an energy of around 2.26 eV. The density of the larger and smaller dots was approximately 108/cm2 and 109/cm2, respectively.
Relation: Journal of Crystal Growth, 242(3-4): 533-537
Appears in Collections:[物理學系] 期刊論文

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