National Changhua University of Education Institutional Repository : Item 987654321/15787

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NCUEIR > College of Science > Department of Physics > Periodical Articles > Item 987654321/15787

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/15787

Title:	Single-electron Transistors and Memory Cells with Au Colloidal Islands
Authors:	Wu, Cen-Shawn;Chen, C. D.;Shih, S. M.;Su, W. F.
Contributors:	物理學系
Date:	2002-12
Issue Date:	2013-03-12T04:06:05Z
Publisher:	American Institute of Physics
Abstract:	In this study, single-electron transistors and memory cells with Au colloidal islands linked by C60 derivatives have been fabricated by hybridization of top–down advanced electron-beam lithography and bottom–up nanophased-material synthesis techniques. Low-temperature transport measurements exhibit clear Coulomb-blockade-type current–voltage characteristics and hysteretic-type gate-modulated current. The hysteresis is attributed to the presence of electrically isolated charge–storage islands. With the guidance provided by Monte Carlo simulation, we propose a circuit model and give an estimate of the sample parameters.
Relation:	Applied Physics Letters, 81(24): 4595-4597
Appears in Collections:	[Department of Physics] Periodical Articles

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