National Changhua University of Education Institutional Repository : Item 987654321/17372
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6507/11669
造访人次 : 30069862      在线人数 : 610
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/17372

题名: Nitrogen-vacancy-related Defects and Fermi Level Pinning in n-GaN Schottky Diodes
作者: Lin, Yow-Jon;Ker, Quantum;Ho, Ching-Yao;Chang, Hsing-Cheng;Chien, Feng-Tso
贡献者: 光電科技研究所
关键词: Schottky diodes;Fermi level;Schottky barriers;Semiconductor-metal boundaries;Surface states;Vacancies (crystal);Defect states;Gallium compounds,III-V semiconductors;Wide band gap semiconductors;Nickel;Gold;X-ray photoelectron spectra;Capacitance;Conduction bands
日期: 2003-08
上传时间: 2013-10-02T08:35:57Z
出版者: American Institute of Physics
摘要: The relationship between the surface states related to nitrogen-vacancy defects and surface Fermi level pinning has been investigated using x-ray photoelectron spectroscopy and capacitance–voltage measurements. Barrier heights of 1.09, 0.50, 1.20, and 0.50 eV, respectively, were obtained for Ni/(NH4)2Sx-treated n-GaN, Ni/etched n-GaN, Au/(NH4)2Sx-treated n-GaN and Au/etched n-GaN Schottky diodes. For Schottky diodes treated with (NH4)2Sx, the observed Schottky barrier height is very close to the Schottky limit, due to the reduction of the surface state density. This also suggests that a large number of surface states related to nitrogen-vacancy defects in the etched n-GaN surface would lead to the pinning of the Fermi level at 0.50 eV below the conduction band edge.
關聯: Journal of Applied Physics, 94(3): 1819-1822
显示于类别:[光電科技研究所] 期刊論文

文件中的档案:

档案 大小格式浏览次数
index.html0KbHTML771检视/开启


在NCUEIR中所有的数据项都受到原著作权保护.

 

DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈