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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17375

Title: Electrical Properties of Pt Contacts on p-GaN Activated in Air
Authors: Lin, Yow-Jon;Wu, Kuo-Chen
Contributors: 光電科技研究所
Keywords: Platinum;Gallium compounds;III-V semiconductors;Wide band gap semiconductors;Semiconductor epitaxial layers;Electrical resistivity;Photoluminescence;Ohmic contacts;Fermi level;Semiconductor-metal boundaries
Date: 2004-03
Issue Date: 2013-10-02T08:36:00Z
Publisher: American Institute of Physics
Abstract: In this study, the electrical properties of Pt contacts on p-type GaN (p-GaN) activated in air were investigated. From the observed photoluminescence result, it is suggested that the hydrogenated Ga vacancies (i.e., VGaH2) were formed during the activation process. However, VGaH2 in p-GaN near the surface was transformed into VGa after Pt deposition, because Pt strongly absorbed hydrogen. A large number of VGa at the Pt/p-GaN interface would lead to the pinning of the Fermi level at 0.3 eV above the valence-band edge, as well as the formation of the low barrier at the interface, and the formation of the nonalloyed ohmic contacts due to the occurrence of the tunneling transmission for holes at the interface.
Relation: Applied Physics Letters, 84(9): 1501-1503
Appears in Collections:[光電科技研究所] 期刊論文

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