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NCUEIR > College of Science > Graduate Institute of Photonics Technologies > Periodical Articles > Item 987654321/17384

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17384

Title:	Comment on “Unraveling the Conduction Mechanism of Al-doped ZnO Films by Valence Band Soft x-ray Photoemission Spectroscopy” [ Appl. Phys. Lett. 86, 042104 (2005) ]
Authors:	Lin, Yow-Jon
Contributors:	光電科技研究所
Keywords:	Aluminium;Zinc compounds;II-VI semiconductors;Wide band gap semiconductors;Semiconductor thin films;X-ray photoelectron spectra;Valence bands, energy gap;Photoluminescence
Date:	2005-05
Issue Date:	2013-10-02T08:36:20Z
Publisher:	American Institute of Physics
Relation:	Applied Physics Letters, 86(21): 216101
Appears in Collections:	[Graduate Institute of Photonics Technologies] Periodical Articles

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