National Changhua University of Education Institutional Repository : Item 987654321/17394
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题名: Optical and Electrical Properties of Undoped ZnO Films
作者: Lin, Yow-Jon;Tsai, Chia-Lung;Lu, Yang-Ming;Liu, Chia-Jyi
贡献者: 光電科技研究所
关键词: Zinc compounds;II-VI semiconductors;Wide band gap semiconductors;Semiconductor thin films;Electrical conductivity;Photoluminescence;Vacancies (crystal);Deep levels
日期: 2006-05
上传时间: 2013-10-02T08:36:39Z
出版者: American Institute of Physics
摘要: Optical and electrical properties of undoped ZnO films were investigated in this study. We find that the conductivity increased with increasing the ratio of (blue luminescence+green luminescence) to ultraviolet luminescence [i.e., (BL+GL)/UVL] defect emission intensities, due to the increase of the singly ionized oxygen vacancy. We deduce that the BL and GL are related to the oxygen-vacancy deep level and the yellow luminescence is attributed to the band-acceptor transition. We also find that poorer crystal quality may lead to the reduction of the optical transmittance. This suggests that these defects and the crystal quality interact to change the conductivity and optical transmittance of ZnO. The spectroscopic correlations may be used as a predictive tool to identify the quality of ZnO.
關聯: Journal of Applied Physics, 99(9): 093501
显示于类别:[光電科技研究所] 期刊論文

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