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NCUEIR > College of Science > Graduate Institute of Photonics Technologies > Periodical Articles > Item 987654321/17400

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17400

Title:	Mechanisms of Performance Improvement for Polymer Light-Emitting Diodes Fabricated on (NH4)2Sx-Treated Indium-Tin Oxide Substrates
Authors:	Lin, Yow-Jon;You, Chang-Feng;Chou, Wei-Yang;Lin, Shih-Ting
Contributors:	光電科技研究所
Keywords:	Organic light emitting diodes;Photoelectron spectra;Vacancies (crystal);Work function;Leakage currents;Surface treatment
Date:	2006-09
Issue Date:	2013-10-02T08:36:44Z
Publisher:	The Electrochemical Society
Abstract:	Photoelectron spectroscopy measurements show that (NH4)2Sx surface treatment may lead to an increase in the work function of indium-tin oxide (ITO), due to the occupation of oxygen vacancies (VO) by sulfur and a reduction in the amount of VO near the ITO surface region. Comparison between the current-luminance-voltage characteristics of polymer light-emitting diodes fabricated on ITO substrates with and without (NH4)2Sx treatment, shows that (NH4)2Sx treatment led to the enhancement of external quantum efficiency, due to the reduction of forward-biased leakage current (resulting from the reduction of VO-related defects near the ITO surface region).
Relation:	Electrochemical and Solid-State Letters, 9(10): G302-G304
Appears in Collections:	[Graduate Institute of Photonics Technologies] Periodical Articles

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