National Changhua University of Education Institutional Repository : Item 987654321/17400
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6491/11663
Visitors : 23833254      Online Users : 118
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item:

Title: Mechanisms of Performance Improvement for Polymer Light-Emitting Diodes Fabricated on (NH4)2Sx-Treated Indium-Tin Oxide Substrates
Authors: Lin, Yow-Jon;You, Chang-Feng;Chou, Wei-Yang;Lin, Shih-Ting
Contributors: 光電科技研究所
Keywords: Organic light emitting diodes;Photoelectron spectra;Vacancies (crystal);Work function;Leakage currents;Surface treatment
Date: 2006-09
Issue Date: 2013-10-02T08:36:44Z
Publisher: The Electrochemical Society
Abstract: Photoelectron spectroscopy measurements show that (NH4)2Sx surface treatment may lead to an increase in the work function of indium-tin oxide (ITO), due to the occupation of oxygen vacancies (VO) by sulfur and a reduction in the amount of VO near the ITO surface region. Comparison between the current-luminance-voltage characteristics of polymer light-emitting diodes fabricated on ITO substrates with and without (NH4)2Sx treatment, shows that (NH4)2Sx treatment led to the enhancement of external quantum efficiency, due to the reduction of forward-biased leakage current (resulting from the reduction of VO-related defects near the ITO surface region).
Relation: Electrochemical and Solid-State Letters, 9(10): G302-G304
Appears in Collections:[Graduate Institute of Photonics Technologies] Periodical Articles

Files in This Item:

File SizeFormat

All items in NCUEIR are protected by copyright, with all rights reserved.


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback