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Title: Comment on “Contact Mechanisms and Design Principles for Alloyed Ohmic Contacts to n-GaN” [ J. Appl. Phys. 95, 7940 (2004) ]
Authors: Lin, Yow-Jon
Contributors: 光電科技研究所
Keywords: Gallium compounds;III-V semiconductors;Wide band gap semiconductors;Ohmic contacts;Tunnelling;Electrical resistivity;Thermionic electron emission;Energy gap
Date: 2006-10
Issue Date: 2013-10-02T08:36:46Z
Publisher: American Institute of Physics
Abstract: The contact mechanism and design principles for alloyed Ohmic contacts to n-GaN were investigated in Mohammad’s paper [ J. Appl. Phys. 95, 7940 (2004) ]. Mohammad’s study demonstrated that both tunneling and thermionic emission were equally important for low resistivity at the metals/n-GaN interfaces. As regards this Comment, we point out the fundamental errors of this interpretation. In addition, we find that the results shown in Figs. 3–6 of Mohammad’s paper are incorrect because the lower effective barrier height (BH) of less than 0 eV (due to the induced BH reduction by image force lowering or band gap narrowing) and a variable (c1) were neglected by the author.
Relation: Journal of Applied Physics, 100(7): 073707
Appears in Collections:[Graduate Institute of Photonics Technologies] Periodical Articles

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