National Changhua University of Education Institutional Repository : Item 987654321/17405
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6498/11670
Visitors : 25696060      Online Users : 103
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item:

Title: Changes in Surface Band Bending, Surface Work Function, and Sheet Resistance of Undoped ZnO Films Due to (NH4)2Sx Treatment
Authors: Lin, Yow-Jon;Tsai, Chia-Lung
Contributors: 光電科技研究所
Keywords: Zinc compounds;II-VI semiconductors;Wide band gap semiconductors;Semiconductor thin films;Valence bands;Work function;Surface treatment;X-ray photoelectron spectra;Photoluminescence;Bonds (chemical);Reduction (chemical);Vacancies (crystal);Surface states
Date: 2006-12
Issue Date: 2013-10-02T08:36:48Z
Publisher: American Institute of Physics
Abstract: In this study, the interaction of undoped ZnO films with (NH4)2Sx treatment have been investigated by x-ray photoelectron spectroscopy, photoluminescence, optical transmittance, and four-point probe. According to the experimental results, we find that the formation of Zn–S bonds and the reduction of oxygen vacancies (i.e., the S occupation of oxygen vacancies) near the ZnO surface might lead to an increase in the upward band bending, resulting in an increase in the sheet resistance and work function of ZnO.
Relation: Journal of Applied Physics, 100(11): 113721
Appears in Collections:[Graduate Institute of Photonics Technologies] Periodical Articles

Files in This Item:

File SizeFormat

All items in NCUEIR are protected by copyright, with all rights reserved.


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback