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題名: Changes in Surface Band Bending, Surface Work Function, and Sheet Resistance of Undoped ZnO Films Due to (NH4)2Sx Treatment
作者: Lin, Yow-Jon;Tsai, Chia-Lung
貢獻者: 光電科技研究所
關鍵詞: Zinc compounds;II-VI semiconductors;Wide band gap semiconductors;Semiconductor thin films;Valence bands;Work function;Surface treatment;X-ray photoelectron spectra;Photoluminescence;Bonds (chemical);Reduction (chemical);Vacancies (crystal);Surface states
日期: 2006-12
上傳時間: 2013-10-02T08:36:48Z
出版者: American Institute of Physics
摘要: In this study, the interaction of undoped ZnO films with (NH4)2Sx treatment have been investigated by x-ray photoelectron spectroscopy, photoluminescence, optical transmittance, and four-point probe. According to the experimental results, we find that the formation of Zn–S bonds and the reduction of oxygen vacancies (i.e., the S occupation of oxygen vacancies) near the ZnO surface might lead to an increase in the upward band bending, resulting in an increase in the sheet resistance and work function of ZnO.
關聯: Journal of Applied Physics, 100(11): 113721
顯示於類別:[光電科技研究所] 期刊論文


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