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题名: Effects of (NH4)2Sx Treatment on Electrical Properties of Indium Tin Oxide/Poly(3,4-ethylenedioxythiophene) Doped with Poly(4-styrenesulfonate)
作者: Lin, Yow-Jon;Chang, Hsing-Cheng;Liu, Bei-Yuan
贡献者: 光電科技研究所
关键词: Conducting polymers;Indium compounds;Organic semiconductors;Interface structure
日期: 2007-03
上传时间: 2013-10-02T08:36:52Z
出版者: American Institute of Physics
摘要: The effects of (NH4)2Sx treatment on the current-voltage characteristics and interfacial properties of the indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT-PSS) samples have been investigated in this study. The authors found that (NH4)2Sx treatment could lead to the improvement of the interfacial stability of ITO/PEDOT-PSS samples. In addition, the current transport at the ITO/PEDOT-PSS interface is governed by the defects induced by interfacial reactions.
關聯: Applied Physics Letters, 90(11): 112112
显示于类别:[光電科技研究所] 期刊論文


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