English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6491/11663
Visitors : 25206100      Online Users : 53
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17412

Title: Comment on “Influence of Indium-tin-oxide Thin-film Quality on Reverse Leakage Current of Indium-tin-oxide/n-GaN Schottky Contacts” [ Appl. Phys. Lett. 89, 033503 (2006) ]
Authors: Lin, Yow-Jon;Tsai, Chia-Lung;Liu, Day-Shan
Contributors: 光電科技研究所
Keywords: Semiconductor thin films;Leakage currents;Schottky barriers;Vacancies (crystal);Positron annihilation;Gallium compounds;III-V semiconductors;Wide band gap semiconductors
Date: 2007-06
Issue Date: 2013-10-02T08:36:54Z
Publisher: American Institute of Physics
Relation: Applied Physics Letters, 90(4): 046101
Appears in Collections:[光電科技研究所] 期刊論文

Files in This Item:

File SizeFormat

All items in NCUEIR are protected by copyright, with all rights reserved.


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback