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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17418

Title: Electronic Transport and Schottky Barrier Height of Ni Contact on p-type GaN
Authors: Lin, Yow-Jon;Lee, Ching-Ting;Chang, Shih-Sheng;Chang, Hsing-Cheng
Contributors: 光電科技研究所
Keywords: Electronics and devices;Semiconductors;Surfaces, interfaces and thin films
Date: 2008-04
Issue Date: 2013-10-02T08:36:59Z
Publisher: IOP Publishing Ltd
Abstract: Carrier transport mechanisms and a barrier height of Ni contacts to p-type GaN (p-GaN) with the structure of a transmission line model were investigated from current–voltage measurements in this study. We find that the method can be adopted for p-GaN, especially in the case where high-quality ohmic contacts are difficult to make. This provides a rational guideline for the development of processing methodologies to estimate the barrier-height value for Schottky diodes without ohmic contacts.
Relation: Journal of Physics D: Applied Physics, 41(9): 095107
Appears in Collections:[光電科技研究所] 期刊論文

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