Carrier transport mechanisms and a barrier height of Ni contacts to p-type GaN (p-GaN) with the structure of a transmission line model were investigated from current–voltage measurements in this study. We find that the method can be adopted for p-GaN, especially in the case where high-quality ohmic contacts are difficult to make. This provides a rational guideline for the development of processing methodologies to estimate the barrier-height value for Schottky diodes without ohmic contacts.
關聯:
Journal of Physics D: Applied Physics, 41(9): 095107
