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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17451

Title: Leakage Currents Through In/MgO/n-type Si/In Structures
Authors: Tsao, Hou-Yen;Lin, Yow-Jon;Chen, Ya-Hui;Chang, Hsing-Cheng
Contributors: 光電科技研究所
Keywords: A. Thin films;A. Semicoductors;C. Point defects
Date: 2011-05
Issue Date: 2013-10-02T08:37:26Z
Publisher: Elsevier B. V.
Abstract: Leakage currents through In/MgO/n-type Si/In structures were studied. The electrical conduction investigations suggest that the leakage behavior is governed by the Schottky (Poole–Frenkel) emission for the gate (substrate) injection. This is because of strong leakage current dependent on the interfacial property of devices. It is shown that the discrepancy in the MgO permittivity extracted from the Schottky and Poole–Frenkel emissions is due to the formation of intermediate MgSixOy layer.
Relation: Solid State Communications, 151(9): 693-696
Appears in Collections:[光電科技研究所] 期刊論文

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