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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17457

Title: Effect of the Induced Electron Traps by Oxygen Plasma Treatment on Transfer Characteristics of Organic Thin Film Transistors
Authors: Huang, Bo-Chieh;Lin, Yow-Jon
Contributors: 光電科技研究所
Keywords: Electron mobility;Electron traps;Grain boundaries;Organic semiconductors;Passivation;Plasma materials processing;Thin film transistors
Date: 2011-09
Issue Date: 2013-10-02T08:37:31Z
Publisher: American Institute of Physics
Abstract: The effect of the induced electron traps by oxygen plasma treatment on transfer characteristics of organic thin film transistors (OTFTs) was researched in this study. From the observed result, the relationship between electron trapping and electrical stability of OTFTs was discussed. It is shown that oxygen plasma treatment may lead to a shift of the threshold voltage towards positive gate-source voltages and an increase in the mobility, resulting from the incorporation of oxygen and the passivation of the defects in the grain-boundary region. It is found that the electrical stability mainly arises from the increased long-lifetime electron-trap density.
Relation: Applied Physics Letters, 99(11): 113301
Appears in Collections:[光電科技研究所] 期刊論文

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