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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17495

Title: Investigation of Enhancement Mechanism of Schottky Barrier Height on Oxidized Ir/AlGaN
Authors: Hsu, C. W.;Lin, Yow-Jon
Contributors: 光電科技研究所
Date: 2003-11
Issue Date: 2013-10-02T08:39:13Z
Publisher: Electron Device and Materials Symposia
Relation: 2003 Electron Device and Materials Symposia, : 394-396
Appears in Collections:[光電科技研究所] 會議論文

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