National Changhua University of Education Institutional Repository : Item 987654321/18481
English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 6469/11641
造訪人次 : 19750410      線上人數 : 270
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 進階搜尋

請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/18481

題名: Formation and Characterization of Ultrasmall Dimension GeSi Wire Structure by Using Pulsed Laser‐induced Epitaxy
作者: Deng, C.;Sigmon, T. W.;Wu, Jong-Ching;Wybourne, M. N.;Rack, J.
貢獻者: 物理學系
日期: 1996
上傳時間: 2014-06-06T07:17:17Z
出版者: American Institute of Physics
摘要: (100)Si substrates are patterned with arrays of Ge wires ∼60 nm in width and ∼6 nm in thickness. Ultrasmall dimension GeSi surface wire structures are then formed in Si in a pulsed laser‐induced epitaxy process. The wire structures are analyzed by secondary electron microscopy, atomic force microscopy, Auger electron spectroscopy, and cross‐sectional transmission electron microscopy. No defects are observed in the wires structures. However, significant side diffusion of Ge, much more than the vertical diffusion occurred during the ∼40 ns pulsed laser‐induced epitaxy process, is observed in the Si substrate. Surface evolution is also observed. Possible explanations for the abnormal Ge side diffusion are discussed.
關聯: Applied Physics Letters, 68(26): 3734-3736
顯示於類別:[物理學系] 期刊論文

文件中的檔案:

檔案 大小格式瀏覽次數
2020200510007.pdf57KbAdobe PDF244檢視/開啟


在NCUEIR中所有的資料項目都受到原著作權保護.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回饋