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Please use this identifier to cite or link to this item:
http://ir.ncue.edu.tw/ir/handle/987654321/18482
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| Title: | Surface Evolution in a Pulsed Laser Induced Epitaxy Process of Submicron SiGe Wires |
| Authors: | Deng, C.;Sigmon, T. W.;Wu, Jong-Ching;Wybourne, M. N. |
| Contributors: | 物理學系 |
| Keywords: | Silicon;Substrates;Germanium;Pattern formation;Nanotechnology;Wires;Pulsed laser deposition;Surface reconstruction;Scanning electron microscopy;Atomic force microscopy;Transmission electron microscopy |
| Date: | 1996-08
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| Issue Date: | 2014-06-06T07:17:28Z
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| Publisher: | The Electrochemical Society |
| Abstract: | (100) Si substrates are patterned with arrays of Ge wires ~60 nm in width and ~6 nm in thickness. Pulsed laser induced epitaxy (PLIE) is used in an attempt to fabricate ultrasmall dimension Ge1–xSix wires. After laser irradiation, interesting changes on the surface are observed. In particular, ripples as high as ~30 nm are formed after the 6 nm Ge wires are incorporated into the substrate. The ripples decrease in height with further laser irradiation. The height is a function of the Ge wire width. Nomarski, scanning electron, atomic force, and cross-sectional transmission electron microscopy are used in the analysis. Possible explanations for the growth of the features are discussed. |
| Relation: | Journal of The Electrochemical Society, 143(8): 2678-2680 |
| Appears in Collections: | [物理學系] 期刊論文
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| 2020200510008.pdf | 25Kb | Adobe PDF | 276 | View/Open |
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