National Changhua University of Education Institutional Repository : Item 987654321/18529
English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 6498/11670
造訪人次 : 25696008      線上人數 : 108
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 進階搜尋

請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/18529

題名: Local Current Distribution and Electrical Properties of a Magnetic Tunnel Junction Using Conducting Atomic Force Microscopy
作者: Canizo-Cabrera, A.;Li, Simon C.;Shu, Min-Fong;Lee, Jia-Mou;Garcia-Vazquez, Valentin.;Chen, C. C.;Wu, Jong-Ching;Takahashi, M.;Wu, Te-Ho
貢獻者: 物理學系
關鍵詞: Conductive atomic force microscopy (CAFM);Dielectric tunnel capacitance;Local electric transport;Magnetic tunnel junction;Magnetoresistance ratio;Ramping effect;Model
日期: 2005-02
上傳時間: 2014-06-06T07:18:26Z
出版者: IEEE
摘要: Local topographical and electrical properties were simultaneously measured for a magnetic tunnel junction formed by Ta (50 �)/Ni-Fe (20 �)/Cu (50 �)/Mn75 Ir25 (100 �)/Co70Fe30(40 �)/Al-O (8-15 �)/Co70Fe30 (40 �)/Ni-Fe (100 �)/Ta (50 �). Local current-voltage (I-V) characteristic curves were obtained for different contrast levels in the electrical current distribution images on the test sample. With the purpose of obtaining quantitative values for the barrier characteristics, data was analyzed by the Simmons' equation from -1.0 to 1.0 V. The magnetoresistance ratio values were estimated to be 35.02%, with a bias voltage of 0.36 V, when applying a magnetic field of �200 Oe. In addition, a study on the ramping effect on the dielectric tunneling capacitance and analytical resistance-capacitance (RC) model were carried out.
關聯: IEEE Transactions on Magnetics, 41(2): 887-891
顯示於類別:[物理學系] 期刊論文

文件中的檔案:

檔案 大小格式瀏覽次數
index.html0KbHTML465檢視/開啟


在NCUEIR中所有的資料項目都受到原著作權保護.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回饋