English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6491/11663
Visitors : 24910444      Online Users : 48
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/18544

Title: The Magnetoresistance Ratio of an MTJ Device and the Influence of Ramping DC Bias Voltage Rate Measured by Conducting Atomic Force Microscope
Authors: Shu, Min-Fong;Canizo-Cabrera, A.;Hsu, Chih-Cheng;Chen, C. C.;Wu, Jong-Ching;Yang, Chao-Chen;Wu, Te-Ho
Contributors: 物理學系
Keywords: Magnetic tunneling junction;Conducting atomic force microscopy;Magnetoresistance;Area-resistance
Date: 2006-09
Issue Date: 2014-06-06T07:18:37Z
Publisher: Elsevier
Abstract: A magnetic tunneling junction (MTJ) with a structure of SiO2 20 nm/Ta 5 nm/Cu 20 nm/Ta 5 nm/NiFe 2 nm/Cu 5 nm/MnIr 10 nm/CoFe 4 nm/Al–O 1.5 nm/CoFe 4 nm/NiFe 20 nm/Ta 50 nm was measured by conducting atomic force microscopy (CAFM) to obtain I–V curves. The magnetoresistance (MR) ratio valued was determined from these I–V curves. Switching field of the free layer was obtained from hysteresis loop analysis derived by alternating gradient magnetometer (AGM). The MR ratio values were measured for several ramping DC bias voltage rates. We found that a low MR ratio was obtained with the highest ramping rate. Moreover, area-resistance (RA) value of MTJ device was also obtained.
Relation: Journal of Magnetism and Magnetic Materials, 304(1): e294-e296
Appears in Collections:[物理學系] 期刊論文

Files in This Item:

File SizeFormat

All items in NCUEIR are protected by copyright, with all rights reserved.


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback