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題名: | Numerical Study on InGaAsN/GaAs Multiple-quantum-well Laser with GaAsP and GaAsN Barriers |
作者: | Kuo, Yen-Kuang;Yen, S. H.;Yao, M. W.;Tsai, M. C.;Chen, M. L.;Liou, B. T. |
貢獻者: | 物理學系 |
日期: | 2008-09
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上傳時間: | 2012-07-19T01:48:23Z
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出版者: | SpringerLink |
摘要: | In this work, the multiple-quantum-well InGaAsN laser structures with indirect-GaAsP and direct-GaAsN barriers are investigated by using LASTIP simulation program. We vary the quantum-well number, from 1 to 5, to find appropriate barrier material for InGaAsN laser structures. The simulation results show that InGaAsN laser structure has higher characteristic temperature regardless of what quantum-well number is if the indirect-GaAsP barrier is utilized. Furthermore, for InGaAsN laser structure, the usage of indirect-GaAsP barrier is beneficial for reducing the threshold current when the quantum-well number is from 1 to 2 and the usage of direct-GaAsN barrier is beneficial for reducing the threshold current when the quantum-well number is from 3 to 5. |
關聯: | Applied Physics B: Lasers and Optics, 93(2-3): 497-506 |
顯示於類別: | [物理學系] 期刊論文
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