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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12522

Title: Numerical Study on InGaAsN/GaAs Multiple-quantum-well Laser with GaAsP and GaAsN Barriers
Authors: Kuo, Yen-Kuang;Yen, S. H.;Yao, M. W.;Tsai, M. C.;Chen, M. L.;Liou, B. T.
Contributors: 物理學系
Date: 2008-09
Issue Date: 2012-07-19T01:48:23Z
Publisher: SpringerLink
Abstract: In this work, the multiple-quantum-well InGaAsN
laser structures with indirect-GaAsP and direct-GaAsN barriers
are investigated by using LASTIP simulation program.
We vary the quantum-well number, from 1 to 5, to find
appropriate barrier material for InGaAsN laser structures.
The simulation results show that InGaAsN laser structure
has higher characteristic temperature regardless of what
quantum-well number is if the indirect-GaAsP barrier is
utilized. Furthermore, for InGaAsN laser structure, the usage
of indirect-GaAsP barrier is beneficial for reducing the
threshold current when the quantum-well number is from
1 to 2 and the usage of direct-GaAsN barrier is beneficial
for reducing the threshold current when the quantum-well
number is from 3 to 5.
Relation: Applied Physics B: Lasers and Optics, 93(2-3): 497-506
Appears in Collections:[物理學系] 期刊論文

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