English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6481/11653
Visitors : 23377035      Online Users : 302
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17396

Title: Optical Properties of Heavily Mg-Doped p-GaN Films Prepared by Reactive Ion Etching
Authors: Lin, Yow-Jon;Chu, Yow-Lin;Liu, Day-Shan;Lee, Chi-Sen;Chien, Feng-Tso
Contributors: 光電科技研究所
Keywords: GaN;Photoluminescence;Reactive ion etching;Donor-acceptor pair;Nitrogen vacancy
Date: 2006-06
Issue Date: 2013-10-02T08:36:41Z
Publisher: The Japan Society of Applied Physics
Abstract: The effect of the damage caused by reactive ion etching on the optical properties of heavily Mg-doped p-type GaN (p-GaN) was investigated in this study. After etching, we found that the blue luminescence (BL) is redshifted and the intensity of the redshifted BL is markedly increased at room temperature, which are attributed to the formation of the lattice disorder resulting in the domination of distant donor–acceptor pairs (DAPs) and the formation of more nitrogen-vacancy-related defects resulting in more recombination centers D responsible for DAP transition.
Relation: Japanese Journal of Applied Physics, 45(1A): 64-66
Appears in Collections:[光電科技研究所] 期刊論文

Files in This Item:

File SizeFormat
index.html0KbHTML402View/Open


All items in NCUEIR are protected by copyright, with all rights reserved.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback