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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/18473

Title: Negative Differential Conductance Observed in a Lateral Double Constriction Device
Authors: Wu, Jong-Ching;Wybourne, M. N.;Berven, C.;Goodnick, S. M.;Smith, Doran D.
Contributors: 物理學系
Date: 1992-11
Issue Date: 2014-06-06T07:16:18Z
Publisher: American Institute of Physics
Abstract: Lateral double point contact devices were fabricated using a split‐gate high electron mobility transistor. The low‐temperature source‐drain characteristics show pronounced S‐shaped negative differential conductance that can be independently controlled by an applied gate bias. The mechanism for the observed switching behavior is believed to be similar to that proposed for heterostructure hot electron diodes.
Relation: Applied Physics Letters, 61(20): 2425-2427
Appears in Collections:[物理學系] 期刊論文

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