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题名: Negative Differential Conductance Observed in a Lateral Double Constriction Device
作者: Wu, Jong-Ching;Wybourne, M. N.;Berven, C.;Goodnick, S. M.;Smith, Doran D.
贡献者: 物理學系
日期: 1992-11
上传时间: 2014-06-06T07:16:18Z
出版者: American Institute of Physics
摘要: Lateral double point contact devices were fabricated using a split‐gate high electron mobility transistor. The low‐temperature source‐drain characteristics show pronounced S‐shaped negative differential conductance that can be independently controlled by an applied gate bias. The mechanism for the observed switching behavior is believed to be similar to that proposed for heterostructure hot electron diodes.
關聯: Applied Physics Letters, 61(20): 2425-2427
显示于类别:[物理學系] 期刊論文


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