English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6498/11670
Visitors : 25686482      Online Users : 132
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
Login ‧ Upload ‧ Help ‧ About ‧ Administer

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/18501

Title: Selective Growth of Single InAs Quantum Dots Using Strain Engineering
Authors: Lee, B. C.;Lin, S. D.;Lee, C. P.;Lee, H. M.;Wu, Jong-Ching;Sun, K. W.
Contributors: 物理學系
Date: 2002-01
Issue Date: 2014-06-06T07:17:54Z
Publisher: American Institute of Physics
Abstract: A method to achieve ordering and selective positioning of single InAs self-assembled quantum dots (QDs) has been developed. The selective growth was achieved by manipulating the strain distribution on the sample surface. The QDs are formed on predesigned mesas with added strain. Single dots were obtained on small mesas. Using this technique, two-dimensional single QD arrays have been achieved.
Relation: Applied Physics Letters, 80(2): 326-328
Appears in Collections:[物理學系] 期刊論文

Files in This Item:

File SizeFormat
index.html0KbHTML432View/Open


All items in NCUEIR are protected by copyright, with all rights reserved.

 

DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback