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http://ir.ncue.edu.tw/ir/handle/987654321/18501
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Title: | Selective Growth of Single InAs Quantum Dots Using Strain Engineering |
Authors: | Lee, B. C.;Lin, S. D.;Lee, C. P.;Lee, H. M.;Wu, Jong-Ching;Sun, K. W. |
Contributors: | 物理學系 |
Date: | 2002-01
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Issue Date: | 2014-06-06T07:17:54Z
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Publisher: | American Institute of Physics |
Abstract: | A method to achieve ordering and selective positioning of single InAs self-assembled quantum dots (QDs) has been developed. The selective growth was achieved by manipulating the strain distribution on the sample surface. The QDs are formed on predesigned mesas with added strain. Single dots were obtained on small mesas. Using this technique, two-dimensional single QD arrays have been achieved. |
Relation: | Applied Physics Letters, 80(2): 326-328 |
Appears in Collections: | [物理學系] 期刊論文
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